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Mechanism for ohmic contact formation of contacts on -type
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10.1063/1.1835535
/content/aip/journal/apl/85/24/10.1063/1.1835535
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835535

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of contacts after annealing in and ambient at . (b) Specific contact resistivities of contacts annealed in and ambient as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

XRD profiles of contacts before and after annealing at .

Image of FIG. 3.
FIG. 3.

SIMS depth profiles of contacts (a) before and after annealing in (b) and (c) ambient. The contacts were annealed at for .

Image of FIG. 4.
FIG. 4.

SRPES spectra of (a) and (b) core levels for contacts before and after annealing at .

Image of FIG. 5.
FIG. 5.

SRPES spectra of (a) and (b) core levels for contacts before and after annealing at .

Tables

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Table I.

Peak intensity ratios of the deconvoluted peaks in the spectra and ratios evaluated from the integration of the and spectra with their sensitivity factors.

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Table II.

Gibbs free energy changes for the formation of , , solid solution, and at .

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/content/aip/journal/apl/85/24/10.1063/1.1835535
2004-12-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835535
10.1063/1.1835535
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