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Surface potential measurements of high-electron-mobility transistors by Kelvin probe force microscopy
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10.1063/1.1835551
/content/aip/journal/apl/85/24/10.1063/1.1835551
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835551
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the measured HEMT.

Image of FIG. 2.
FIG. 2.

Surface potential image of HEMT.

Image of FIG. 3.
FIG. 3.

The potential profile along the A-B line in Fig. 2 at the position of 300 nm away from the gate electrode (solid line) and transient behavior of drain current recovery from the collapsed level (dotted line).

Image of FIG. 4.
FIG. 4.

The potential profile in the vertical direction at gate-source access region.

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/content/aip/journal/apl/85/24/10.1063/1.1835551
2004-12-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface potential measurements of AlGaN∕GaN high-electron-mobility transistors by Kelvin probe force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835551
10.1063/1.1835551
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