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Surface potential measurements of high-electron-mobility transistors by Kelvin probe force microscopy
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10.1063/1.1835551
/content/aip/journal/apl/85/24/10.1063/1.1835551
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835551
/content/aip/journal/apl/85/24/10.1063/1.1835551
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/content/aip/journal/apl/85/24/10.1063/1.1835551
2004-12-09
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface potential measurements of AlGaN∕GaN high-electron-mobility transistors by Kelvin probe force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1835551
10.1063/1.1835551
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