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In-plane (a) and out-of-plane (b) diffraction pattern of BN thin films with different ion-induced damage and stress relaxation. The in-plane spectrum of the nonreleased sample shows a very low intensity due to the small film thickness (50 nm).
(111) lattice spacing measured in the in-plane (●) and out-of-plane (엯) geometries for samples with different degrees of ion-induced damage and stress relaxation. For comparison, the values of polycrystalline , a nonrelaxed thin film and a thin film that is stress free after annealing at 900 °C are shown.
Medium-energy ion bombardment parameters during MS deposition and the computed ion-induced damage. The measured intrinsic stress values derived from in situ cantilever bending are also included and correlate with the degree of ion-induced damage.
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