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(a) FE-SEM image of as-grown ZnO NWs, scale bar is 20 μm. Inset image shows a single ZnO NW terminated with a gold nanoparticle, scale bar is 100 nm. (b) HRTEM image and diffraction pattern of a ZnO NW.
(a) Room-temperature curves obtained at different gate voltages. Inset: SEM image of a ZnO NW FET with source and drain electrodes, scale bar is 2 μm. (b) Transconductance of the ZnO NW FET under 100, 75, 50, and 25 mV bias voltage. (c) curves obtained at different temperatures at . Inset: Conductance of NW device vs inverse temperature.
(a) Transconductance of a ZnO NW FET under different pressures at room temperature, and . Inset: curve of the NW under 760, 380, and . (b) Ratio of conductance change vs radius under a vacuum and atmosphere. Inset: A schematic of NW FET channel depletion (depicted by gray shading) caused by adsorption of oxygen molecules.
curves obtained in 0, 10, 25, and 50 ppm at . Conductance of ZnO NW decreases monotonically with increasing concentration. Inset: Relationship between sensitivity and gate voltage.
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