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ZnO nanowire field-effect transistor and oxygen sensing property
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10.1063/1.1836870
/content/aip/journal/apl/85/24/10.1063/1.1836870
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836870
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Figures

Image of FIG. 1.
FIG. 1.

(a) FE-SEM image of as-grown ZnO NWs, scale bar is 20 μm. Inset image shows a single ZnO NW terminated with a gold nanoparticle, scale bar is 100 nm. (b) HRTEM image and diffraction pattern of a ZnO NW.

Image of FIG. 2.
FIG. 2.

(a) Room-temperature curves obtained at different gate voltages. Inset: SEM image of a ZnO NW FET with source and drain electrodes, scale bar is 2 μm. (b) Transconductance of the ZnO NW FET under 100, 75, 50, and 25 mV bias voltage. (c) curves obtained at different temperatures at . Inset: Conductance of NW device vs inverse temperature.

Image of FIG. 3.
FIG. 3.

(a) Transconductance of a ZnO NW FET under different pressures at room temperature, and . Inset: curve of the NW under 760, 380, and . (b) Ratio of conductance change vs radius under a vacuum and atmosphere. Inset: A schematic of NW FET channel depletion (depicted by gray shading) caused by adsorption of oxygen molecules.

Image of FIG. 4.
FIG. 4.

curves obtained in 0, 10, 25, and 50 ppm at . Conductance of ZnO NW decreases monotonically with increasing concentration. Inset: Relationship between sensitivity and gate voltage.

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/content/aip/journal/apl/85/24/10.1063/1.1836870
2004-12-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO nanowire field-effect transistor and oxygen sensing property
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836870
10.1063/1.1836870
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