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Vertical nanowire light-emitting diode
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10.1063/1.1836873
/content/aip/journal/apl/85/24/10.1063/1.1836873
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836873
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Figures

Image of FIG. 1.
FIG. 1.

(a) Electron micrograph of electrodeposited ZnO nanowires on polycrystalline films on glass. (b) Tip view of a single ZnO wire showing a faceted hexagonal cross section.

Image of FIG. 2.
FIG. 2.

Schematic diagram of nanowire LED arrangement with insulator filling the space between wires and a very thin film covering the wire tips.

Image of FIG. 3.
FIG. 3.

Electron micrograph of nanowires embedded in PS. (a) Overview at beam incidence. (b) Close-up of nanowire tips with PS showing thin PS coverage at nanowire tips. (c) Scanning electron micrograph of a single nanowire tip. The layer thickness ranges between and 50 nm depending on preparation conditions.

Image of FIG. 4.
FIG. 4.

(a) characteristics of the LED structure. For fast scans a NDR regime is observed, that can be attributed to a slow transport process and charging. In slower scans, a monotonic behavior is found. (b) PL and EL spectra obtained at room temperature in air. The PL is obtained with excitation at 355 nm of a frequency-tripled Nd–YAG laser. A strong excitonic band at 384 nm and a defect-related band centered at 620 nm are observed. The EL occurs at a threshold of . As in the PL spectrum, a defect-related band centered at 620 nm is observed. A shoulder indicates excitonic luminescence in the UV region.

Image of FIG. 5.
FIG. 5.

Stability of light emission at room temperature in air. The solid line is a least-squares fit based on a stretched exponential dependence, with and .

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/content/aip/journal/apl/85/24/10.1063/1.1836873
2004-12-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical nanowire light-emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836873
10.1063/1.1836873
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