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Light-induced switching in back-gated organic transistors with built-in conduction channel
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10.1063/1.1836877
/content/aip/journal/apl/85/24/10.1063/1.1836877
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836877
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Figures

Image of FIG. 1.
FIG. 1.

(a) The rubrene back-gated OFET with the built-in conduction channel. The source/drain contacts and the conduction channel are on the top facet of the crystal; the back gate is isolated from the bottom facet with thin parylene film. (b) The reaction of the self-sensitized photo-oxidation of rubrene to endoperoxide by singlet molecular oxygen, responsible for the formation of the built-in surface conduction in rubrene (see Refs. 13 and 14).

Image of FIG. 2.
FIG. 2.

The dependence of the source–drain current, , on the back-gate voltage, , measured at fixed in the dark. The sketch of the back-gated device is shown in the inset. The crystal thickness , , parylene thickness . At , the current measurements are limited by the sensitivity of our experimental setup .

Image of FIG. 3.
FIG. 3.

The effect of a light pulse on the conductivity of the depleted back-gated rubrene OFETs. The source–drain current, , was measured at . The initial low-current OFF state in the dark was prepared by “blocking” the Schottky contacts by a large positive , which was fixed for the whole duration of this measurement. Illumination of the front surface results in factor-of- increase of that persists after the light is off.

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/content/aip/journal/apl/85/24/10.1063/1.1836877
2004-12-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light-induced switching in back-gated organic transistors with built-in conduction channel
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/24/10.1063/1.1836877
10.1063/1.1836877
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