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Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to -type GaN
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10.1063/1.1826231
/content/aip/journal/apl/85/25/10.1063/1.1826231
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1826231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of the IZO contacts to before and after annealing process. The inset shows the light transmittance for an IZO sample annealed at for .

Image of FIG. 2.
FIG. 2.

AES depth profile of the IZO contacts to : (a) for the as-deposited sample, the layers of IZO and are well defined indicating no significant interdiffusion between them, (b) for the annealed sample, In atoms have accumulated near the interface, and a diffusion tail for Ga atom is observed.

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) core levels of IZO interfaces before and after annealing process, (b) core levels of IZO interfaces before and after annealing.

Image of FIG. 4.
FIG. 4.

Power efficiency (output power∕input power) for LEDs with an IZO thin film as a transparent layer and a conventional LED. The light output power for LED with IZO film was increased by 34% at of input power compared to that of the LED with a layer.

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/content/aip/journal/apl/85/25/10.1063/1.1826231
2004-12-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1826231
10.1063/1.1826231
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