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characteristics of the IZO contacts to before and after annealing process. The inset shows the light transmittance for an IZO sample annealed at for .
AES depth profile of the IZO contacts to : (a) for the as-deposited sample, the layers of IZO and are well defined indicating no significant interdiffusion between them, (b) for the annealed sample, In atoms have accumulated near the interface, and a diffusion tail for Ga atom is observed.
XPS spectra of (a) core levels of IZO interfaces before and after annealing process, (b) core levels of IZO interfaces before and after annealing.
Power efficiency (output power∕input power) for LEDs with an IZO thin film as a transparent layer and a conventional LED. The light output power for LED with IZO film was increased by 34% at of input power compared to that of the LED with a layer.
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