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Direct observations of dislocation half-loops inserted from the surface of the heteroepitaxial film
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10.1063/1.1839271
/content/aip/journal/apl/85/25/10.1063/1.1839271
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839271

Figures

Image of FIG. 1.
FIG. 1.

Bright field plan-view image of the system after annealing at for . Two-beam condition, , .

Image of FIG. 2.
FIG. 2.

TEM image of the cross-section (110) of the heterostructure after annealing at during . The schemes below show misfit dislocations with threading branches and dislocation half-loops propagating from the surface. substrate, film. Two-beam condition, , .

Image of FIG. 3.
FIG. 3.

Enlarged fragment of Fig. 1. The arrows A and B indicate the visible regions of nucleation of dislocation half-loops. The scheme below shows the planes {111} of slipping of threading dislocation segments.

Tables

Generic image for table
Table I.

Density of threading dislocations and degree of plastic relaxation of samples annealed at .

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/content/aip/journal/apl/85/25/10.1063/1.1839271
2004-12-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839271
10.1063/1.1839271
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