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Effects of -type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
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10.1063/1.1839279
/content/aip/journal/apl/85/25/10.1063/1.1839279
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839279
/content/aip/journal/apl/85/25/10.1063/1.1839279
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/content/aip/journal/apl/85/25/10.1063/1.1839279
2004-12-15
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839279
10.1063/1.1839279
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