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Effects of -type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
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10.1063/1.1839279
/content/aip/journal/apl/85/25/10.1063/1.1839279
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The depth profiles of Al and Ti impurities in the surface region of SiC epitaxial layer using SIMS measurement.

Image of FIG. 2.
FIG. 2.

Distributions in field-to-breakdown of thermal oxides grown on 4H-SiC(0001) epitaxial wafers with high (wafer A) and low (wafer B) influences obtained from time-zero dielectric breakdown measurement.

Image of FIG. 3.
FIG. 3.

Weibull distribution plots of charge-to-breakdown for thermal oxides grown on 4H-SiC(0001) epitaxial wafers with high (wafer A) and low (wafer B) influences obtained from time-dependent dielectric breakdown measurement.

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/content/aip/journal/apl/85/25/10.1063/1.1839279
2004-12-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1839279
10.1063/1.1839279
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