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Comparative plots of Ln as a function of the inverse of and Ln as a function of , obtained for sample 1 deposited at and , in order to check the linearity of the dependence.
Variation of the prefactor as a function of for all the studied films deposited at different rf powers as indicated, assuming a band-tail hopping transport mechanism, compared to the results for other amorphous carbon-based materials: a-C (Ref. 16), a-C:H (Ref. 12), (Ref. 17). The dotted line is the simulation from the bandtail hopping model.
Correlation between computed and values derived from the BTH model, using and as parameters, and the experimental results.
Summary of the deposition temperature and rf power and the results obtained for the prefactor , the activation energy [Eq. (3)], the prefactor , and the slope [Eq. (1)] for samples 1–6. For all the calculated values the estimated relative error is in the range 5%–7%.
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