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Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning
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View: Figures


Image of FIG. 1.
FIG. 1.

Typical STM image when Si(110) wafer is dipped into dilute HF-containing solution (Sample A). The scanned area is . The inset shows a highly resolved area of the surface.

Image of FIG. 2.
FIG. 2.

Typical STM image when surface in Fig. 1 is subsequently rinsed for (Sample B). The scanned area is . Large terraces spread along the direction.

Image of FIG. 3.
FIG. 3.

Magnified image of surface in Fig. 2. The scanned area is . Zig–zag chains inside a terrace, single rows at step edges of upper terraces, and isolated zig–zag chains are labeled A, B, and C, respectively. A white line traces part of a zig–zag chain inside a terrace.

Image of FIG. 4.
FIG. 4.

Schematic drawing of terrace and step of structure. The open, shaded, and black circles represent the first-, second-layer Si atoms and H atoms, respectively. Monohydride rows are aligned uniformly along the direction. The gray dotted lines marked A and B represent a zig–zag chain inside a terrace and a single row at step edges in the STM image, respectively. The monohydride line marked M at step edges of lower terraces can be interpreted as a minimum (111) facet.

Image of FIG. 5.
FIG. 5.

Typical STM image when the surface in Fig. 1 is subsequently rinsed for (Sample C). The scanned area is . In addition to terraces and steps along the direction as observed in Fig. 2, the ridge-shaped structure of nanometer height marked D appears.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning