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Drive current enhancement in -type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
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10.1063/1.1841452
/content/aip/journal/apl/85/25/10.1063/1.1841452
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841452
/content/aip/journal/apl/85/25/10.1063/1.1841452
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/content/aip/journal/apl/85/25/10.1063/1.1841452
2004-12-15
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841452
10.1063/1.1841452
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