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Drive current enhancement in -type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
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10.1063/1.1841452
/content/aip/journal/apl/85/25/10.1063/1.1841452
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841452
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Isoenergy contours separated by 20 meV in the (001) plane for the lowest energy hole band under 500 MPa (a) compression, and (b) tension along the [110] channel direction “.”

Image of FIG. 2.
FIG. 2.

Long channel mobility gain as a function of total uniaxial stress.

Image of FIG. 3.
FIG. 3.

The ratio of the strained velocity to the unstrained velocity plotted vs the lateral field for bulk material. The legend refers to the compressive stress in MPa.

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/content/aip/journal/apl/85/25/10.1063/1.1841452
2004-12-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841452
10.1063/1.1841452
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