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Photoluminescence and polarized photodetection of single ZnO nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of as synthesized ZnO NWs. (b) High resolution TEM image with selected area electron diffraction pattern (inset) of a ZnO NW. (c) curves for a ZnO NW FET at different gate voltages. Top inset: AFM image of the NW FET. Bottom inset: transconductance of NW FET vs gate voltage.

Image of FIG. 2.
FIG. 2.

(a) The PL of a ZnO NW excited with 351 nm UV laser. (b) The photoconductivity of a ZnO NW obtained at 0.2 V drain-source bias .

Image of FIG. 3.
FIG. 3.

(a) curves and transconductance of a ZnO NW with and without 633 nm laser illumination. (b) Power law dependence of photocurrent on input optical power. The red curve is a power law fitting showing an exponent of 0.43. (c) The time domain measurements of photo-response to 633 nm laser in air and (inset). (d) Photocurrent as a function of the light polarization angle for both UV (bottom) and visible light (top). The inset plot shows a spectrum of halogen light source.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence and polarized photodetection of single ZnO nanowires