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Tailoring the Ti∕4H–SiC Schottky barrier by ion irradiation
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10.1063/1.1841476
/content/aip/journal/apl/85/25/10.1063/1.1841476
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841476
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Figures

Image of FIG. 1.
FIG. 1.

(a) Forward and (b) reverse IV characteristics of Ti∕4H–SC Schottky diodes before (as-prepared) and after irradiation with 8 MeV at fluences between and .

Image of FIG. 2.
FIG. 2.

(a) Cross section TEM micrograph of the as-prepared Ti∕4H–SiC; (b) high resolution TEM image of the region marked with the frame; the line indicates the position of the Ti∕SiC interface (the epitaxial layer is 8° off axis); (c) TEM of the sample irradiated at the fluence of ; (d) high resolution taken between regions I and II of the Ti layer.

Image of FIG. 3.
FIG. 3.

Chemical maps of the elements Ti, Si, and determined by EFTEM of an irradiated sample, showing that the interface remain unchanged, i.e., no reaction between Ti and SiC occurred. The presence of an element is indicated by a bright contrast in the map.

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/content/aip/journal/apl/85/25/10.1063/1.1841476
2004-12-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tailoring the Ti∕4H–SiC Schottky barrier by ion irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/25/10.1063/1.1841476
10.1063/1.1841476
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