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(a) Forward and (b) reverse I–V characteristics of Ti∕4H–SC Schottky diodes before (as-prepared) and after irradiation with 8 MeV at fluences between and .
(a) Cross section TEM micrograph of the as-prepared Ti∕4H–SiC; (b) high resolution TEM image of the region marked with the frame; the line indicates the position of the Ti∕SiC interface (the epitaxial layer is 8° off axis); (c) TEM of the sample irradiated at the fluence of ; (d) high resolution taken between regions I and II of the Ti layer.
Chemical maps of the elements Ti, Si, and determined by EFTEM of an irradiated sample, showing that the interface remain unchanged, i.e., no reaction between Ti and SiC occurred. The presence of an element is indicated by a bright contrast in the map.
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