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dot organization on substrates patterned by focused ion beam
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10.1063/1.1828597
/content/aip/journal/apl/85/26/10.1063/1.1828597
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/26/10.1063/1.1828597
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM image of a patterned area where holes were created with a beam after removal and wet chemical cleaning. The diameter of the holes is and the pitch is .

Image of FIG. 2.
FIG. 2.

Organization of dots on patterned areas at a growth temperature of and thickness of . The initial hole diameter was with a pitch of (a) 180 and (b) . The graphs give the evolution of (c) the mean dot size and the dot density with the hole pitch.

Image of FIG. 3.
FIG. 3.

Organization of dots on patterned areas at a growth temperature of and thickness of . The initial holes diameter was with a pitch of (a) 350, (b) 200, and (c) . The graphs give the evolution of (d) the mean dot size and island density with the hole pitch.

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/content/aip/journal/apl/85/26/10.1063/1.1828597
2004-12-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge dot organization on Si substrates patterned by focused ion beam
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/26/10.1063/1.1828597
10.1063/1.1828597
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