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Lateral junction for acoustoelectric nanocircuits
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of the device. 1—SAW transducer, -type doped part of the mesa, -type ohmic contact, 4—light emitting area of the lateral junction, -type doped part of the mesa, -type ohmic contact.

Image of FIG. 2.
FIG. 2.

characteristic of diode 1 close to the current threshold at . The inset illustrates (on a semilog scale) the behavior of the diode under a wider range of forward bias voltages.

Image of FIG. 3.
FIG. 3.

Electroluminescence spectra recorded at a range of drive currents for diode 1 at .

Image of FIG. 4.
FIG. 4.

Acoustoelectric current induced by the SAW through diode 2 as a function of the frequency of the microwave signal applied to the SAW transducer at for a microwave signal power of . The inset illustrates charge transport from the to the region by the SAW.

Image of FIG. 5.
FIG. 5.

SAW induced luminescence (solid line) at with a microwave power of . The dashed and dotted lines show EL spectra caused by the dc current in the absence of a SAW.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral n–p junction for acoustoelectric nanocircuits