Schematic of the device. 1—SAW transducer, -type doped part of the mesa, -type ohmic contact, 4—light emitting area of the lateral junction, -type doped part of the mesa, -type ohmic contact.
characteristic of diode 1 close to the current threshold at . The inset illustrates (on a semilog scale) the behavior of the diode under a wider range of forward bias voltages.
Electroluminescence spectra recorded at a range of drive currents for diode 1 at .
Acoustoelectric current induced by the SAW through diode 2 as a function of the frequency of the microwave signal applied to the SAW transducer at for a microwave signal power of . The inset illustrates charge transport from the to the region by the SAW.
SAW induced luminescence (solid line) at with a microwave power of . The dashed and dotted lines show EL spectra caused by the dc current in the absence of a SAW.
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