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Studies of multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition
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10.1063/1.1773371
/content/aip/journal/apl/85/3/10.1063/1.1773371
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/3/10.1063/1.1773371
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Figures

Image of FIG. 1.
FIG. 1.

(a) High resolution transmission electron micrograph bright field images, showing a decrease of the density of defect levels towards the growth direction. (b) Black contrast due to strain between the well and barrier, and quantum dot-like structures due to segregation of from the wells.

Image of FIG. 2.
FIG. 2.

Double crystal x-ray diffraction spectrum of a scan of (0004) for an multiquantum-well green LED structure: (a) experimental data (solid line), (b) simulation (dashed line), giving composition of in the wells and period of obtained from satellite peak positions etc., taking into the account the thick base layer, and (c) simulation (dotted line) without taking into account the layer.

Image of FIG. 3.
FIG. 3.

PL spectra of multiquantum-well green LEDs measured at different low temperatures: the quantum-well resonance peak (GL) shows “S” shaped shift, i.e., red–blue–red shift with variation of the temperature.

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/content/aip/journal/apl/85/3/10.1063/1.1773371
2004-07-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Studies of InGaN∕GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/3/10.1063/1.1773371
10.1063/1.1773371
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