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Nickel silicidation on and -type junctions at
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10.1063/1.1775292
/content/aip/journal/apl/85/3/10.1063/1.1775292
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/3/10.1063/1.1775292
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

behavior for a fully silicided film on both and substrates.

Image of FIG. 2.
FIG. 2.

XTEM images and selective area electron diffracton patterns for both reactions: (a) on substrate and (b) on substrate. The revealed thin void layer close to the top surface is due to Kirkendall voiding.

Image of FIG. 3.
FIG. 3.

(a) XPS for film surface, middle region, and interface. (b) Random and aligned RBS for a fully silicided film on both and substrates. The inset shows the comparison between raw data and simulation data (solid line). For the inset the raw yield and simulation data for has been doubled to make a clear view.

Image of FIG. 4.
FIG. 4.

Dark-field PTEM pictures for both reactions: (a) on and (b) on .

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/content/aip/journal/apl/85/3/10.1063/1.1775292
2004-07-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nickel silicidation on n and p-type junctions at 300°C
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/3/10.1063/1.1775292
10.1063/1.1775292
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