Transfer characteristics of FETs with different gate lengths (800, 600, 100, 40, and ; the current increases with decreasing gate length). Solid lines show the fits using Eq. (1) and mobility determined from the magnetoresistance experiments. The inset (a) shows the mobility vs gate voltage for an transistor. Inset (b) shows the source drain resistance vs square of the magnetic field for a transistor with .
Detected drain-source signal as a function of the gate voltage for two transistors with (squares) and (circles) gates. Radiation frequency , . Inset shows the signal vs attenuation for the gate voltage .
Detected drain-source signal as a function of the gate voltage for two transistors [ (squares) and (circles)]. Radiation frequency . . The inset shows the calculation of the photoresponse for higher mobilities—with increasing mobility (, , , , ) signal rises and changes from a nonresonant response to a resonant response.
Parameters of the transistors used in the plasma wave experiments. - gate length, - mobility for , - ideality factor, - threshold voltage, - gate leakage parameter.
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