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Temperature dependence of resistance measured on the GB and the bulk for sample L36 (a), L24 (b), M36 (c), and M24 (d). Insets: current–voltage curves at low temperatures.
Temperature dependence of GB conductance below and fits (—) to . Sample L36 GB (∎) and sample L24 GB (엯).
Nonlinear differential conductance curves of sample L36 (a) and sample L24 (b) below .
Based on DSB model, original built-in potential in the GB (a) is reduced by oxygen reduction due to the vacancy segregation effect (b).
List of reduction conditions and carrier concentrations.
Temperature and bias dependence of conductance, and estimated built-in barrier potential at .
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