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Evidence from atomistic simulations of fluctuation electron microscopyfor preferred local orientations in amorphous silicon
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10.1063/1.1776614
/content/aip/journal/apl/85/5/10.1063/1.1776614
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1776614
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Figures

Image of FIG. 1.
FIG. 1.

FEM signal for four models with grains occupying a fraction (shown by circles) or (shown by squares) of the model atoms. The open symbols (left panel) are for models in which the four grains are randomly rotated with respect to one another while the closed symbols (right panel) are for models where all four grains have the same orientation. A CRN is shown by the dashed line. Only models with a large and aligned grains show the second peak higher than the first. Scaled and shifted experimental data (crosses) for films, from Gerbi et al. (Ref.9), measured for ion to neutral flux ratio of 13 (25) are shown in the left (right) panel.

Image of FIG. 2.
FIG. 2.

FEM signal for grains of unstrained crystalline Si () with no matrix. The symbols are for cylinders with a length to radius ratio of 0.5 and the cylinder axis along the indicated crystal direction. The solid line is for a sphere. The dependence of relative peak heights on anisotropy of grain shapes is evident.

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/content/aip/journal/apl/85/5/10.1063/1.1776614
2004-07-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence from atomistic simulations of fluctuation electron microscopyfor preferred local orientations in amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1776614
10.1063/1.1776614
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