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Removal of thick layers for optical devices using band-gap-selective photoelectrochemical etching
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10.1063/1.1776615
/content/aip/journal/apl/85/5/10.1063/1.1776615
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1776615
/content/aip/journal/apl/85/5/10.1063/1.1776615
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/content/aip/journal/apl/85/5/10.1063/1.1776615
2004-07-27
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Removal of thick (>100nm)InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1776615
10.1063/1.1776615
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