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Increase of free carrier lifetime in nonpolar -plane grown by epitaxial lateral overgrowth
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10.1063/1.1777409
/content/aip/journal/apl/85/5/10.1063/1.1777409
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1777409
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time-integrated luminescence spectra of the -plane (triangles), the -plane (squares) , and the -plane ELOG (circles) for the excitation energy density .

Image of FIG. 2.
FIG. 2.

Time-resolved luminescence spectra of the -plane ELOG film for the excitation energy density . The spectra are arbitrary shifted along the vertical axis. Points show experimental results, whereas solid lines demonstrate calculation results. The delay time and the estimated carrier temperature are also indicated.

Image of FIG. 3.
FIG. 3.

Transient behavior of the luminescence intensity at the peak position of spontaneous emission in the -plane (triangles), the -plane (squares) , and the -plane ELOG (circles) for the excitation energy density . Lines correspond to calculations for various densities of deep traps.

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/content/aip/journal/apl/85/5/10.1063/1.1777409
2004-07-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/5/10.1063/1.1777409
10.1063/1.1777409
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