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(a) Atomic force microscope image of the growth (front) surface of a STO substrate showing unit cell steps with atomically smooth terraces. (b) Photo of the back of a micromachined substrate with a typical height profile superimposed on it. Thickness in the middle ranges from 10 to , with surface roughness of approximately .
Comparison of direct measurements of charge with electrometer to the integrated charge from ac measurements to a direct product . The discrepancy between the electrometer measurement and is a leakage current artifact due to asynchronous onset of charge integration with respect to turning off the gate voltage. The inset shows as a function of applied dc voltage .
Measurements of the integrated charge as a function of the applied electric field at different temperatures for a -thick STO dielectric. The inset shows the characteristic of a -thick dielectric that was stressed to breakdown. Note that the dielectric had higher breakdown fields than the device.
Off diagonal component of electrostriction as a function of electric field at temperatures below the cubic-tetragonal structural transition.
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