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Tuning multiple quantum dots for long-wavelength infrared detectors
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10.1063/1.1777822
/content/aip/journal/apl/85/6/10.1063/1.1777822
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/6/10.1063/1.1777822
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A sketch represents the multiple quantum dot structures investigated and (b) schematics of the bound states in the quantum dots are shown as and .

Image of FIG. 2.
FIG. 2.

Optical absorption spectra, measured at , are plotted for intersubband transition in the multiple quantum dots grown with a different number of monolayers. The theoretical curves (dashed lines) obtained from convoluting Eq. (2) with either a Lorentzian line shape for bound-to-bound transitions or Eq. (3) for bound-to-continuum transitions. The spectra were displaced vertically for clarity.

Image of FIG. 3.
FIG. 3.

The peak position energy (wave number) converted to wavelength (second axis) measured at and plotted as a function of the number of monolayers of . The solid line is drawn to guide the eye.

Image of FIG. 4.
FIG. 4.

The integrated areas of the intersubband transitions measured at and plotted as a function of the number of monolayers of . The solid line is drawn to guide the eye.

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/content/aip/journal/apl/85/6/10.1063/1.1777822
2004-08-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/6/10.1063/1.1777822
10.1063/1.1777822
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