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Defect-enhanced photoconductive response of silicon-implanted borosilicate glass
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Image of FIG. 1.
FIG. 1.

Photocurrent of as-implanted MSM-PD at wavelength of: (a) and (b) under illumination as compared to the dark current of MSM-PD on (c) as-implanted , (d) unprocessed BSO glass, and (e) illuminated as-implanted . The inset is the pattern of MSM-PD.

Image of FIG. 2.
FIG. 2.

EPR spectrum of the annealed . The inset illustrates the possible photoelectron transport of MSM-PD. (1) The thermionic emission of Aluminum- junction. (2) The band-to-band transition of . (3) The hole emission from -defect level. (4) The electron emission from the -defect level.

Image of FIG. 3.
FIG. 3.

(a) The PL spectrum of as-implanted MSM-PD, (b) the equivalent defect density obtained from the integral of PL spectrum, and (c) the wavelength dependence of the photocurrent and responsivity for the as-implanted MSM-PD.

Image of FIG. 4.
FIG. 4.

Photocurrent of MSM-PD with gap spacing on as-implanted as a function of annealing time at under illumining wavelength and power of and . The inset is the PL spectra of annealed at for different annealing times.

Image of FIG. 5.
FIG. 5.

Photocurrent–voltage response of the MSM-PD made on buried oxide-etched substrate.


Generic image for table
Table I.

The figures of merits of MSM-PD biased at and illuminated at . : responsivity, NEP: noise equivalent power, : detectivity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect-enhanced photoconductive response of silicon-implanted borosilicate glass