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Photocurrent of as-implanted MSM-PD at wavelength of: (a) and (b) under illumination as compared to the dark current of MSM-PD on (c) as-implanted , (d) unprocessed BSO glass, and (e) illuminated as-implanted . The inset is the pattern of MSM-PD.
EPR spectrum of the annealed . The inset illustrates the possible photoelectron transport of MSM-PD. (1) The thermionic emission of Aluminum- junction. (2) The band-to-band transition of . (3) The hole emission from -defect level. (4) The electron emission from the -defect level.
(a) The PL spectrum of as-implanted MSM-PD, (b) the equivalent defect density obtained from the integral of PL spectrum, and (c) the wavelength dependence of the photocurrent and responsivity for the as-implanted MSM-PD.
Photocurrent of MSM-PD with gap spacing on as-implanted as a function of annealing time at under illumining wavelength and power of and . The inset is the PL spectra of annealed at for different annealing times.
Photocurrent–voltage response of the MSM-PD made on buried oxide-etched substrate.
The figures of merits of MSM-PD biased at and illuminated at . : responsivity, NEP: noise equivalent power, : detectivity.
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