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Cross-sectional STEM images of stacked QDs embedded in a SRL whose spacer thickness is (a) and (b) . (c) The dependence of the density, diameter, and height of the second layer InAs QDs on the spacer thickness of GaAs. The lines are a guide for the eyes.
PL spectra of three layers stacked InAs QDs embedded in SRL whose spacer thickness is (a) [type (I)] and (b) [type (IV)].
The dependence of the peak wavelengths of five types of stacked InAs QDs [type (I)–(V)] on the temperature of postgrowth annealing. The growth conditions of five types of stacked InAs QDs are shown in Table I. The temperature of postgrowth annealing varied ranging from .
(a) Lasing spectra of fabricated QD lasers consisting of stacked InAs QDs of type (II) just above and below the threshold current (the injection current of and ). Dashed line is the PL spectrum of the active layer of fabricated QD lasers. Inset is a schematic diagram of five layers vertically aligned InAs QDs. (b) and characteristics of fabricated QD lasers. Inset is the EL spectra of fabricated QD lasers at the injection current ranging from .
Growth conditions of five different types of stacked InAs QDs.
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