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self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots
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10.1063/1.1781741
/content/aip/journal/apl/85/6/10.1063/1.1781741
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/6/10.1063/1.1781741

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional STEM images of stacked QDs embedded in a SRL whose spacer thickness is (a) and (b) . (c) The dependence of the density, diameter, and height of the second layer InAs QDs on the spacer thickness of GaAs. The lines are a guide for the eyes.

Image of FIG. 2.
FIG. 2.

PL spectra of three layers stacked InAs QDs embedded in SRL whose spacer thickness is (a) [type (I)] and (b) [type (IV)].

Image of FIG. 3.
FIG. 3.

The dependence of the peak wavelengths of five types of stacked InAs QDs [type (I)–(V)] on the temperature of postgrowth annealing. The growth conditions of five types of stacked InAs QDs are shown in Table I. The temperature of postgrowth annealing varied ranging from .

Image of FIG. 4.
FIG. 4.

(a) Lasing spectra of fabricated QD lasers consisting of stacked InAs QDs of type (II) just above and below the threshold current (the injection current of and ). Dashed line is the PL spectrum of the active layer of fabricated QD lasers. Inset is a schematic diagram of five layers vertically aligned InAs QDs. (b) and characteristics of fabricated QD lasers. Inset is the EL spectra of fabricated QD lasers at the injection current ranging from .

Tables

Generic image for table
Table I.

Growth conditions of five different types of stacked InAs QDs.

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/content/aip/journal/apl/85/6/10.1063/1.1781741
2004-08-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/6/10.1063/1.1781741
10.1063/1.1781741
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