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Photoelectrochemically prepared macroporous silicon: (a) Side view of long pores and (b) top view reveals 2D hexagonal ordering with a pore distance of .
Silicon dioxide shells formed after oxidation of pore walls and removal of bottom bulk silicon substrate.
Electron transmission through single pores with oxide membrane on top. Squares show the transmission for every one of the ten measured pores while stars represent the average transmission at the corresponding energy. The solid line is a guide for the eye for the experimental values. The dashed line represents the calculated transmission of electrons through of oxide into a cone with opening an angle of 1.4°. Inset: Measurement geometry.
Transmission from far infrared to visible. In the far infrared, pronounced absorption lines due to vibrations in the silicon dioxide membrane are observed. The transmission in the visible is quasi-zero as major parts of the light are diffracted at the entrance of the pores toward the absorbing pore walls. Inset: Increase of transmission for very short wavelengths due to reduced diffraction.
Transmission for x-rays. The transmission increases for higher energies and approaches the limit of 31%. The absorption edges of silicon and oxygen atoms of the silicon oxide membrane are indicated.
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