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Control of photoluminescence properties of Si nanocrystals by simultaneously doping - and -type impurities
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10.1063/1.1779955
/content/aip/journal/apl/85/7/10.1063/1.1779955
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/7/10.1063/1.1779955
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Annealing temperature dependence of (a) pure nc-Si, (b) B-doped nc-Si, (c) P-doped nc-Si, and (d) B- and P-codoped nc-Si. All spectra are taken at the same condition. A vertical line is drawn at the band-gap energy of bulk Si crystals .

Image of FIG. 2.
FIG. 2.

(Color) Contour plots of PL peak energy [(a)–(d)] and intensity [(e)–(f)] as a function of B and P concentrations. Annealing temperatures are [(a) and (e)], [(b) and (f)], [(c) and (g)], [(d) and (h)]. P concentration was set to 0, 0.10, 0.40, and 0.79, and B concentration to 0, 0.30, 0.62, and . The data of 16 samples are plotted in each graph after a smoothing procedure. On the white lines, and are the same, while on the black lines, the sum of and is fixed to be .

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/content/aip/journal/apl/85/7/10.1063/1.1779955
2004-08-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/7/10.1063/1.1779955
10.1063/1.1779955
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