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A schematic diagram of a micromachined silicon nitride TEM structure. This structure was fabricated by depositing a thick silicon oxide film on one side of a double-side polished -thick wafer and a -thick silicon nitride layer as an etch-stop layer on the other side. The oxide layer was patterned by photolithography and wet etched to produce a disk shape with an inner and outer diameter of 1 and , respectively. Silicon was etched through the pattern with hot ethylene diamine pyrocatechol (EDP) up to the nitride to produce the silicon nitride membrane structure.
TEM bright-field images showing the progress in crystal growth during the crystallization of amorphous nickel–titanium films. These films were annealed in situ at in the TEM column for (a) formation of nuclei at the onset time , ; (b) continued growth at ; (c) at ; (d) at ; (e) at ; (f) at ; (g) at ; and (h) at , were full crystallization of the amorphous matrix is complete.
A DSC thermogram for an amorphous film. The film crystallizes at .
Bright-field electron micrographs showing the martensite transformation during cooling [(a) B2 at , (b) B2 at , and (c) at ] and heating [(d) B2 at , (e) at , and (f) at ]. Electron diffraction pattern in the inset of (f) shows rings consistent with the martensite phase. The temperature was brought to temperatures below room temperature by a liquid nitrogen-cooled cryo-box surrounding the heating holder.
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