Full text loading...
IPS SBHs for diodes after a anneal. Two SBHs are observed for diodes using Process A (HF) and Process B as represented in the Fowler plot inset. Process B vs A generates higher second slope SBHs. There is no process correlation for first slope SBHs.
IPE SBHs for diodes after a anneal. Two SBHs are observed for diodes processed using Process A (HF) and Process C . Process C vs A generates lower IPE SBHs for all diodes. Diodes 10 and 11 exhibit further first slope SBH shifts to lower energies. Diodes 5, 8, and 9 are electrically shorted.
AlGaN NBE at for diodes using LEEN spectroscopy vs processing for diodes as numbered in the legend. Diodes 1–4 with Process C exhibit lower AlGaN near-band-edge energies than diodes 5–11 with Process A (HF). Diodes 10 and 11 exhibit further AlGaN NBE shifts to lower energies that correlate with further IPE shifts.
Article metrics loading...