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Size control of quantum wires by tailoring exchange
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10.1063/1.1787155
/content/aip/journal/apl/85/8/10.1063/1.1787155
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/8/10.1063/1.1787155
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Accumulated stress evolution in an InAs surface exposed to a flux during at three temperatures: (HT), (MT), (LT). The arrows mark the switch between As and P cells.

Image of FIG. 2.
FIG. 2.

(continuous line) and room-temperature (dotted lines) PL spectra of the InAs QWrs capped with thick InP layer grown at different temperature ranges (LT, MT, and HT).

Image of FIG. 3.
FIG. 3.

TEM images, in the left, and HRTEM images, in the right, of the HT and LT stack samples of InAs QWrs.

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/content/aip/journal/apl/85/8/10.1063/1.1787155
2004-08-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/8/10.1063/1.1787155
10.1063/1.1787155
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