Systematic correlation between Raman spectra, photoluminescence intensity, and absorption coefficient of silica layerscontaining Si nanocrystals
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(a) Raman spectra and (b) PL spectra of various points of sample A. The displacements, , from the sample edge with the lowest Si concentration are shown. In plot (a), the Raman shift of bulk Si is shown. The PL was measured with excitation at . For comparison, the dotted line presents the PL spectrum with excitation at for . For sample B, the behavior is qualitatively similar.
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Correlation between various parameters measured for samples A (solid circles) and B (open circles). The data points correspond to various areas of the samples obtained with a spatial step of , all together 26 data points being presented. The PL intensity at was measured. The absorption coefficient was measured at . The Raman data correspond to the HE band. Similar dependencies take place for the LE band but with a lower fitting accuracy. PL was excited at in plot (a) and at in plots (b) and (d). The excitation was used to decrease influence of absorption of the probing beam, however, very similar dependencies were obtained for excitation at . The PL data in plots (b) and (d) are normalized by the layer thickness.
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