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Surface morphology of buffer layer and its effect on growthby metalorganic chemical vapor deposition
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10.1063/1.1784034
/content/aip/journal/apl/85/9/10.1063/1.1784034
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1784034

Figures

Image of FIG. 1.
FIG. 1.

The traces of in situ optical reflectivity measurements for the three stages in the whole growth process of epilayers on low-temperature buffer layer with different annealing time: (a) (b) .

Image of FIG. 2.
FIG. 2.

The traces of in situ optical reflectivity measurements for the whole growth process of epilayers on low-temperature buffer layer with the same annealing time and different thickness: (a) , (b) , (c) , (d) . The dashed lines denote the start of epilayers’ growth.

Image of FIG. 3.
FIG. 3.

AEM images of the surface morphology of the buffer layers, where , and are for the growth of samples A, B, and C, respectively.

Tables

Generic image for table
Table I.

Growth condition and characterization results of samples.

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/content/aip/journal/apl/85/9/10.1063/1.1784034
2004-08-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface morphology of AlN buffer layer and its effect on GaN growthby metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1784034
10.1063/1.1784034
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