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Reduction of dislocations in epilayers grown on substrate using inserting layer
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10.1063/1.1784046
/content/aip/journal/apl/85/9/10.1063/1.1784046
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1784046
/content/aip/journal/apl/85/9/10.1063/1.1784046
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/content/aip/journal/apl/85/9/10.1063/1.1784046
2004-08-27
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1784046
10.1063/1.1784046
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