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Layout of the system with snapshots of the electric field amplitude. A Gaussian pulse with carrier frequencies (solid line) and (dashed line) is incident on the structure. The fields are shown at the pulse peak. The shaded background indicates the material structure, with dark grey denoting the Kerr material and light grey the LH slabs. The defect layer is centered within the structure. The dotted vertical line shows the source location, the dash-dotted vertical lines denote the boundaries of the considered structure. The field is incident from the left.
Linear amplitude transmission coefficient of the structure calculated by the TMM (line) and PSTD (symbols) methods. The band gaps are indicated by shaded regions. The band gap lies around . The first conventional Bragg gap lies around while the first Bragg gap in the left-handed regime lies around .
Dependence of the defect frequency on the position offset of the defect layer in the linear limit.
Time-integrated transmitted intensity per pulse, relative to that of the incident pulse, in the gap (solid line) and the gap (dashed line). Bistability occurs in the gap for all offsets, while the bistability region for the gap is indicated in the graph by grey shading.
Output vs input intensity of the structure, showing hysteresis behavior for defect offsets of , in the gap and , , in the gap. The curve in the gap is an almost vanishing straight line without bistability.
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