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Room-temperature continuous-wave operation of quantum dot laser with barrier grown by solid source molecular beam epitaxy
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10.1063/1.1789236
/content/aip/journal/apl/85/9/10.1063/1.1789236
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1789236

Figures

Image of FIG. 1.
FIG. 1.

Comparison of low-temperature PL spectra from -thick QD samples with barriers, -thick barriers, and -thick barriers.

Image of FIG. 2.
FIG. 2.

Comparison of AFM images of uncapped QD samples with different barrier thickness of (a) , (b) , (c) , and (d) . The scanned area is .

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of QD laser structure, and (b) cross-sectional TEM image of the QD active region.

Image of FIG. 4.
FIG. 4.

Room temperature cw and characteristics of QD laser. The inset shows the room temperature electroluminescence lasing spectrum.

Tables

Generic image for table
Table I.

Summary of RT pulsed and cw threshold current density, and lasing wavelength for lasers with different active layer structure.

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/content/aip/journal/apl/85/9/10.1063/1.1789236
2004-08-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/85/9/10.1063/1.1789236
10.1063/1.1789236
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