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Sketch of a single MRAM cell suitable for toggled switching. The top ferromagnetic electrode is formed by a trilayer stack of two ferromagnetic layers separated by a spacer, which assures antiparallel alignment of the two magnetizations. This AFM stack is separated by an insulating thin tunnel barrier from the bottom ferromagnetic electrode which is pinned by an AFM layer.
(a) Orientation of the AMF stack with respect to the magnetic fields and generated by the currents of the word line and of the bit line. (b) Sketch of operation for the toggled switching, dashed and full arrows correspond to the upper and lower magnetic layer of the AFM stack, respectively.
Operation as a reconfigurable magnetologic gate: in a first step the cell is set to output 0 or 1 to select the logic function (upper part). In a second step, bit and word line are regarded as logic inputs, where 0 corresponds to not addressing and 1 to addressing the respective line (lower part). Only both inputs at 1 lead to a toggled switching.
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