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High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
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View: Figures


Image of FIG. 1.
FIG. 1.

Optical transmittance as viewed through the source∕drain region ( in the visible portion of the electromagnetic spectrum) of a zinc tin oxide channel TTFT. (Inset) Prototypical TTFT device structure.

Image of FIG. 2.
FIG. 2.

XRD pattern obtained from an zinc tin oxide thin film deposited from a target of stoichiometry and subjected to a anneal; reference stick patterns for ilmenite (black), and spinel (grey) are superimposed. This XRD pattern is representative of the amorphous nature of zinc tin oxide films employed as TTFT channel layers with post-deposition annealing treatments up to . (Inset) cross-sectional image of a zinc tin oxide thin film; the scale bar on the image is .

Image of FIG. 3.
FIG. 3.

Representative and characteristics for zinc tin oxide (sputter deposited from a target) TTFTs annealed at . Inset shows characteristic ( is varied from in steps and increases with increasing ).

Image of FIG. 4.
FIG. 4.

Representative characteristics for zinc tin oxide TTFTs fabricated on a Si substrate and annealed at 300 and . The higher annealing temperature yields a higher mobility and a lower turn-on voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer