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High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer
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10.1063/1.1844034
/content/aip/journal/apl/86/1/10.1063/1.1844034
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1844034
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

scans of the ZnO101 and STO 100 reflections: ZnO grows with the side of the hexagon parallel to the short side of the rectangular surface cell of STO 110.

Image of FIG. 2.
FIG. 2.

RHEED and AFM images of ZnO thin films grown at 570 ° C (left) and 800 °C (right); The rms roughness of the two films are 0.43 and 2.9 nm, respectively. By lowering the deposition temperature a quasi-two-dimensional growth mode can be achieved.

Image of FIG. 3.
FIG. 3.

Mobility as a function of the temperature for 470 and 940-nm-thick films grown by a two-step deposition. The relaxation layers are 70- and 140-nm-thick, respectively. Hall mobility (closed symbols) and mobility estimated from magnetoresistivity data (open symbols) show an exponential decay with the temperature.

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/content/aip/journal/apl/86/1/10.1063/1.1844034
2004-12-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1844034
10.1063/1.1844034
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