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Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix
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10.1063/1.1844042
/content/aip/journal/apl/86/1/10.1063/1.1844042
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1844042
/content/aip/journal/apl/86/1/10.1063/1.1844042
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/content/aip/journal/apl/86/1/10.1063/1.1844042
2004-12-22
2015-01-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1844042
10.1063/1.1844042
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