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Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett.86, 016101 (2005)]
1.C. S. Oh, C. J. Youn, G. M. Yang, K. Y. Lim, and J. W. Yang, Appl. Phys. Lett. 86, 016101 (2005), preceding paper.
4.D. K. Sahoo, R. K. Lal, H. Kim, V. Tilak, and L. F. Eastman, IEEE Trans. Electron Devices 50, 1163 (2003).
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