1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation
Rent:
Rent this article for
USD
10.1063/1.1845588
/content/aip/journal/apl/86/1/10.1063/1.1845588
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1845588
/content/aip/journal/apl/86/1/10.1063/1.1845588
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/1/10.1063/1.1845588
2004-12-23
2014-09-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1845588
10.1063/1.1845588
SEARCH_EXPAND_ITEM