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Mechanism for pinhole formation in layers from steps at the substrate surface
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10.1063/1.1845599
/content/aip/journal/apl/86/1/10.1063/1.1845599
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1845599
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Figures

Image of FIG. 1.
FIG. 1.

(a) HRTEM micrograph at the interface in the system. Steps in the substrate surface have been determined, as well as a typical pinhole contrast in that area.

Image of FIG. 2.
FIG. 2.

(a) Filtered image of the step 2 (in Fig. 1), showing the decomposition of a step into two different steps with heights . Extra-planes in the AlN are indicated by arrows.

Image of FIG. 3.
FIG. 3.

Schematic illustration of the steps exhibited in Fig. 2: (a) the step, (b) the step. In (a), the associated disconnection separates distinct interfacial structures, while in (b) the defect delineates energetically degenerate interfacial structures at the adjacent terraces.

Image of FIG. 4.
FIG. 4.

(Color online) Proposed mechanism for the pinhole origin in . Steps with different height in the (111) Si surface have been marked with A to C. The thickness of the cross section HRTEM specimen has been represented with dotted lines (see the two arrows terminated black line).

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/content/aip/journal/apl/86/1/10.1063/1.1845599
2004-12-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for pinhole formation in GaN∕AlN∕Si(111) layers from steps at the substrate surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/1/10.1063/1.1845599
10.1063/1.1845599
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