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Correlation of nanochemistry and electrical properties in films grown by metalorganic molecular-beam epitaxy
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10.1063/1.1873049
/content/aip/journal/apl/86/10/10.1063/1.1873049
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/10/10.1063/1.1873049

Figures

Image of FIG. 1.
FIG. 1.

Hf core-level spectra in films with tilt angles of 30° (dashed curves) and 75° (solid curves).

Image of FIG. 2.
FIG. 2.

(a) Si and (b) O core-level spectra in with tilt angles of 30° and 75°.

Image of FIG. 3.
FIG. 3.

HRTEM images of films annealed at temperatures of (a) , (b) , and (c) in ambient for and characteristics (d) for the same samples. The measurements were performed at and room temperature. The inset shows the accumulation capacitance density at and current density at for films with varying ratios, where is the interfacial layer thickness and is the layer thickness.

Tables

Generic image for table
Table I.

The atomic percent areas of each chemical state in the deconvoluted Si and O spectra at 30° tilt.

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/content/aip/journal/apl/86/10/10.1063/1.1873049
2005-02-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/10/10.1063/1.1873049
10.1063/1.1873049
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