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Cross-sectional TEM image of an InAs/InGaAlAs/InP quantum dash structure grown using nominal amount of InAs .
Room temperature photoreflectance spectrum of InAs/InGaAlAs/InP QDash structure (for of InAs). Observed optical transitions are marked with arrows.
Low temperature PL and PR spectra for four QDash samples differing in the amount of InAs material used for the growth of the dash layer (given in nm). The energy position of the cap and WL related PR features is shown by vertical dotted lines.
Dependence of the transition energies in WL QW vs the thickness of the well layer for room temperature case. The inset shows the band lineup and existing confined energy levels.
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