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Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures
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10.1063/1.1881782
/content/aip/journal/apl/86/10/10.1063/1.1881782
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/10/10.1063/1.1881782
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of an InAs/InGaAlAs/InP quantum dash structure grown using nominal amount of InAs .

Image of FIG. 2.
FIG. 2.

Room temperature photoreflectance spectrum of InAs/InGaAlAs/InP QDash structure (for of InAs). Observed optical transitions are marked with arrows.

Image of FIG. 3.
FIG. 3.

Low temperature PL and PR spectra for four QDash samples differing in the amount of InAs material used for the growth of the dash layer (given in nm). The energy position of the cap and WL related PR features is shown by vertical dotted lines.

Image of FIG. 4.
FIG. 4.

Dependence of the transition energies in WL QW vs the thickness of the well layer for room temperature case. The inset shows the band lineup and existing confined energy levels.

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/content/aip/journal/apl/86/10/10.1063/1.1881782
2005-03-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/10/10.1063/1.1881782
10.1063/1.1881782
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