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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth
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View: Figures


Image of FIG. 1.
FIG. 1.

The reduction of in identically doped junctions activated with various ramp-up rates in the range between 1 and on the left axis. Open symbols correspond to spike SPER anneals at 700 °C. Black symbols are anneals at 650 °C for 1 min. (36 and ) and spike SPER at 750 °C . On the right axis the enhancement of boron active level as derived from formula (1) is presented vs ramp-up rate.

Image of FIG. 2.
FIG. 2.

Increase of and reduction of boron activation when a preanneal at 480 °C is done for times in the range of followed by spike SPER activation at 700 °C with ramp-up rate of .

Image of FIG. 3.
FIG. 3.

analysis of isochronally post-annealed junctions for , that were initially activated with various ramp-up rates: (700 °C spike SPER), (650 °C, 1 min), (700 °C spike SPER), and (750 °C spike SPER). values of these junctions are different for low post-annealing temperatures, below 720 °C, before the boron deactivation starts. At temperatures above 950 °C all the curves overlap, because the same amount of dopants participate in thermal diffusion and high-temperature activation.

Image of FIG. 4.
FIG. 4.

Average active boron concentration of junctions initially activated with different ramp-up rates after isochronal post-anneals for . Samples are activated in the same way as the ones presented in Fig. 3.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth