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Eptaxial layer structure of the LT-InGaAs and InGaAlAs M buffer grown on GaAs.
Annealing temperature dependency of in-plane and out-of-plane lattice constant. The freestanding lattice constant and indium composition were calculated from and .
Peak position and FWHM of the LT-InGaAs samples obtained from PL measurements as a function of the annealing temperature.
(a) Normalized transient reflectivity of the as-grown LT-InGaAs. (b) Carrier lifetime of the LT-InGaAs on the M buffer as a function of the annealing temperature and the undoped (Ref. 14) and Be-doped (Ref. 15) InGaAs on InP as a function of the growth temperature.
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