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Carrier dynamics of low-temperature-grown on GaAs using an InGaAlAs metamorphic buffer
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10.1063/1.1872207
/content/aip/journal/apl/86/11/10.1063/1.1872207
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1872207
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Eptaxial layer structure of the LT-InGaAs and InGaAlAs M buffer grown on GaAs.

Image of FIG. 2.
FIG. 2.

Annealing temperature dependency of in-plane and out-of-plane lattice constant. The freestanding lattice constant and indium composition were calculated from and .

Image of FIG. 3.
FIG. 3.

Peak position and FWHM of the LT-InGaAs samples obtained from PL measurements as a function of the annealing temperature.

Image of FIG. 4.
FIG. 4.

(a) Normalized transient reflectivity of the as-grown LT-InGaAs. (b) Carrier lifetime of the LT-InGaAs on the M buffer as a function of the annealing temperature and the undoped (Ref. 14) and Be-doped (Ref. 15) InGaAs on InP as a function of the growth temperature.

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/content/aip/journal/apl/86/11/10.1063/1.1872207
2005-03-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier dynamics of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/11/10.1063/1.1872207
10.1063/1.1872207
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