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X-ray diffraction scans (offset vertically) used to determine the crystallographic relationship between the epitaxial -based films and the substrate. The inclination angle and the family of planes is noted for each scan.
Tapping-mode AFM image of the surface morphology of the plane LED grown on plane . The in-plane orientation of the axis of the films is shown in the inset; the striations in the surface run perpendicular to the  direction. A cross section of the surface morphology is shown.
Symmetric x-ray diffraction scan of the diffraction peak. The primary and secondary superlattice fringes are readily apparent, indicating that the quantum wells are repeatable despite the rough surface morphology shown in Fig. 2.
Electroluminescence efficiency of the plane LED as a function of current density, with a wire-grid polarizer placed between the sample and the photodetector selecting the polarization of the luminescence. indicates that the polarization is parallel to the axis while indicates that the polarization is perpendicular to the axis. The inset shows the electroluminescence spectrum at (both polarizations of light are included).
Polarization ratio of the plane LED photoluminescence as temperature is increased from room temperature to . The polarization ratio is defined relative to the axis. The inset shows the data plotted in an Ahrrenius relationship with a fitted activation energy of .
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