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arrays of ac-excited silicon microcavity plasma devices
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color) Voltage-current characteristics of arrays for Ne pressures of and an ac driving frequency of . Note that the voltages are expressed as peak-to-peak values. The dashed horizontal line denotes the ignition voltage of the array for and the inset is a cross-sectional diagram of a single microplasma pixel. All pixels are inverted square pyramid devices.

Image of FIG. 2.
FIG. 2.

(Color) Photographs of a microplasma array fabricated in a Si wafer: (Left) The finished device (top) and the array in operation in of Ne; (right) optical micrographs (obtained with a telescope and a CCD camera) of portions of the array. For all of these photographs, the ac (sinusoidal) excitation frequency is and the RMS current drawn by the array is . The device pitch is .

Image of FIG. 3.
FIG. 3.

(Color) (Top) False color image, recorded with a neutral density filter, telescope, and CCD camera, of the visible emission intensity produced by a segment of a array. A superposition of four line-outs, obtained from different columns and rows of pixels and representative of those observed elsewhere on the array, is shown in the lower portion of the figure.

Image of FIG. 4.
FIG. 4.

Variation of the total power consumption of an array with the array size (number of pixels) for devices and a fixed pitch of . The right-hand ordinate presents the total power consumed whereas the left-hand ordinate gives the power consumption normalized to the active area of the array. All data were obtained for but for three values of excitation frequency (5, 10, and ), and the uncertainty in each measurement is smaller than the size of its associated symbol.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 40000pixel arrays of ac-excited silicon microcavity plasma devices